Material Science
Gallium Arsenide
85%
Solar Cell
76%
Vapor Phase Epitaxy
71%
Hydride
67%
Molecular Beam Epitaxy
46%
Surface (Surface Science)
42%
Photovoltaics
23%
Epitaxy
16%
Thin Films
14%
Film
14%
Density
13%
Electronic Circuit
10%
Germanium
8%
Heterojunction
7%
Epilayers
7%
Halide
7%
Photoluminescence
6%
Light-Emitting Diode
6%
Nitride Compound
6%
Single Crystal
5%
Surface Morphology
5%
Phase Composition
5%
Nitriding
5%
Doping (Additives)
5%
Reflection High-Energy Electron Diffraction
5%
Sapphire
5%
Engineering
Solar Cell
100%
Gallium Arsenide
91%
Photovoltaics
25%
Gaas Substrate
22%
Band Gap
14%
High Growth Rate
14%
Flat Surface
12%
Thin Films
12%
Device Performance
11%
Open Circuit Voltage
10%
Cost Reduction
9%
Material Quality
8%
Planarization
8%
Phase Composition
8%
Growth Condition
7%
Passivation
7%
Surface Morphology
7%
Low-Temperature
6%
Ge Substrate
6%
Atomic Hydrogen
6%
Heterojunctions
5%
Cell Performance
5%
Deep Level
5%
Growth Temperature
5%
Dilute Nitride
5%
Photocurrent
5%
Minority Carriers
5%
Short-Circuit Current Density
5%
Nitride
5%
Dopants
5%
