Material Science
Density
13%
Doping (Additives)
5%
Electronic Circuit
10%
Epilayers
7%
Epitaxy
16%
Film
14%
Gallium Arsenide
85%
Germanium
8%
Halide
7%
Heterojunction
7%
Hydride
67%
Light-Emitting Diode
6%
Molecular Beam Epitaxy
46%
Nitride Compound
6%
Nitriding
5%
Phase Composition
5%
Photoluminescence
6%
Photovoltaics
23%
Reflection High-Energy Electron Diffraction
5%
Sapphire
5%
Single Crystal
5%
Solar Cell
76%
Surface (Surface Science)
42%
Surface Morphology
5%
Thin Films
14%
Vapor Phase Epitaxy
71%
Engineering
Atomic Hydrogen
6%
Band Gap
14%
Cell Performance
5%
Cost Reduction
9%
Deep Level
5%
Device Performance
11%
Dilute Nitride
5%
Dopants
5%
Flat Surface
12%
Gaas Substrate
22%
Gallium Arsenide
91%
Ge Substrate
6%
Growth Condition
7%
Growth Temperature
5%
Heterojunctions
5%
High Growth Rate
14%
Low-Temperature
6%
Material Quality
8%
Minority Carriers
5%
Nitride
5%
Open Circuit Voltage
10%
Passivation
7%
Phase Composition
8%
Photocurrent
5%
Photovoltaics
25%
Planarization
8%
Short-Circuit Current Density
5%
Solar Cell
100%
Surface Morphology
7%
Thin Films
12%