Engineering
Band Gap
18%
Buffer Layer
14%
Conversion Efficiency
5%
Device Performance
8%
Device Structure
6%
Dislocation Density
11%
Dopants
5%
Flat Surface
12%
Gaas Substrate
20%
Gallium Arsenide
86%
Ge Substrate
7%
Growth Condition
10%
Growth Temperature
6%
Heterojunctions
9%
High Growth Rate
13%
Junction Solar Cell
5%
Lattice Constant
6%
Material Quality
7%
Multijunction Solar Cell
7%
Open Circuit Voltage
10%
Passivation
7%
Phase Composition
5%
Photovoltaics
25%
Planarization
8%
Short-Circuit Current Density
5%
Solar Cell
100%
Surface Morphology
5%
Tandem Cell
5%
Thermophotovoltaic
9%
Threading Dislocation
11%
Tunnel
7%
Material Science
Buffer Layer
12%
Cathodoluminescence
6%
Density
18%
Electronic Circuit
9%
Epitaxy
15%
Film
5%
Gallium Arsenide
76%
Halide
6%
Heterojunction
9%
Hydride
80%
Phase Composition
5%
Photovoltaics
24%
Solar Cell
73%
Surface (Surface Science)
30%
Vapor Phase Epitaxy
88%