Engineering
Minority Carriers
100%
Carrier Lifetime
98%
Gallium Arsenide
79%
Solar Cell
64%
Thin Films
50%
Transients
45%
Photovoltaics
40%
Recombination Lifetime
33%
Deep Level
24%
Defects
24%
Polycrystalline
22%
Injection Level
19%
Diffusion Length
19%
Heterostructures
18%
Vapor Deposition
18%
Chemical Vapor Deposition
18%
Interface Recombination
17%
Heterojunctions
15%
Transmissions
15%
Grain Boundary
13%
Bulk Lifetime
13%
Lifetime Measurement
12%
Recombination Centre
11%
Time-of-Flight
10%
Doping Level
10%
Silicon Wafer
9%
Aluminium Gallium Arsenide
9%
Shockley
9%
Surface Recombination Velocity
9%
Radiative Recombination
9%
Excess Carrier
8%
Auger Recombination
8%
Passivation
8%
Decay Time
7%
Interface State
7%
Nanocrystalline
7%
Radio Frequency
7%
Back Contact
7%
Silicon Solar Cell
6%
Ge Substrate
6%
Buffer Layer
6%
Device Structure
6%
Crystalline Silicon
6%
Space Charge
6%
Carrier Density
6%
Electron Trap
6%
Open Circuit Voltage
6%
Activation Energy
6%
Energy Gap
6%
Spectral Response
6%
Material Science
Gallium Arsenide
87%
Carrier Lifetime
75%
Thin Films
68%
Photoluminescence
59%
Film
57%
Solar Cell
55%
Photovoltaics
43%
Heterojunction
42%
Silicon
31%
Density
24%
Deep-Level Transient Spectroscopy
22%
Photoconductivity
21%
Carrier Concentration
19%
Capacitance
16%
Chemical Vapor Deposition
15%
Oxide Compound
13%
Carrier Mobility
12%
Grain Boundary
12%
Electronic Property
12%
Molecular Beam Epitaxy
12%
Optical Property
10%
Diffusivity
10%
Single Crystal
10%
Carrier Transport
10%
Electronic Circuit
10%
Nanocrystalline Silicon
9%
Buffer Layer
9%
Activation Energy
9%
Indium
8%
Cathodoluminescence
7%
Aluminum
7%
Aluminium Gallium Arsenide
7%
Doping (Additives)
7%
Carbon Dioxide
6%
Hole Mobility
6%
Indium Tin Oxide
6%
Metal-Organic Chemical Vapor Deposition
6%
Superconducting Material
6%
Nanocrystalline Material
5%
Nanowires
5%
Electrodeposition
5%
Absorption Spectrum
5%
Electronic Structure
5%
Luminescence
5%
Crystalline Material
5%
Hall Mobility
5%
Secondary Ion Mass Spectrometry
5%
