1-eV GaInNAs Solar Cells for Ultrahigh-Efficiency Multijunction Devices

    Research output: Contribution to conferencePaper


    We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. This device is intended for use as the third junction of future-generation ultrahigh-efficiency three- and four-junction devices. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes have open-circuit voltagesranging from 0.35 to 0.44 V, short-circuit currents of 1.8 mA/cm 2 , and fill factors from 61% to 66%. The short-circuit currents are of principal concern: the internal quantum efficiencies rise only to about 0.2. We discuss the short diffusion lengths which are the reason for this low photocurrent. As a partial workaround for the poor diffusion lengths, we demonstrate a depletion-width-enhancedvariation of one of the prototype devices that trades off decreased voltage for increased photocurrent, with a short-circuit current of 6.5 mA/cm 2 and an open-circuit voltage of 0.29 V.
    Original languageAmerican English
    Number of pages6
    StatePublished - 1998
    Event2nd World Conference on PV Energy Conversion - Vienna, Austria
    Duration: 6 Jul 199810 Jul 1998


    Conference2nd World Conference on PV Energy Conversion
    CityVienna, Austria

    NREL Publication Number

    • NREL/CP-520-23874


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