1-MeV-Electron Irradiation of GaInAsN Cells: Preprint

Research output: Contribution to conferencePaper


This conference paper describes the GaInAsN cells that are measured to retain 93?3% and 89?4% of their original efficiency after exposure to 5 X 1014 and 1 X 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by < 1%. Temperature-coefficient data forGaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements inthe GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.
Original languageAmerican English
Number of pages7
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002


Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-32006


  • 1-mev electron irradiation
  • capacitance voltage (CV)
  • diode quality factor
  • linear interpolation
  • multijunction cells
  • photocurrent
  • PV
  • quantum efficiency (QE)
  • radiation-resistant device
  • short circuit current (ISC)


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