Abstract
This conference paper describes the GaInAsN cells that are measured to retain 93?3% and 89?4% of their original efficiency after exposure to 5 X 1014 and 1 X 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by < 1%. Temperature-coefficient data forGaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements inthe GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.
Original language | American English |
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Number of pages | 7 |
State | Published - 2002 |
Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE PV Specialists Conference |
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City | New Orleans, Louisiana |
Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-32006
Keywords
- 1-mev electron irradiation
- capacitance voltage (CV)
- diode quality factor
- linear interpolation
- multijunction cells
- photocurrent
- PV
- quantum efficiency (QE)
- radiation-resistant device
- short circuit current (ISC)