(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Wondwosen Metaferia, Jason Chenenko, Corinne Packard, Aaron Ptak, Kevin Schulte

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


We demonstrate the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting. The vast majority of III-V epitaxy development is on (100)-oriented substrates, but epitaxy is not limited to this orientation. Here, we demonstrate (110)-based GaAs solar cells grown by HVPE with equivalent performance to devices grown on the more standard (100) orientation. We also demonstrate spalling of (110) oriented substrates, revealing surfaces with flat terraces separated by steps. These results provide preliminary evidence of a potentially low-cost path for terrestrial III-V photovoltaics via the (110) substrate orientation.

Original languageAmerican English
Number of pages3
StatePublished - 2021
Event2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) -
Duration: 20 Jun 202125 Jun 2021


Conference2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5900-78979


  • (110) orientation
  • GaAs
  • HVPE
  • III-V
  • photovoltaic
  • PV
  • spalling


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