12.3% CuIn1-xGaxSe2-Based Device from Electrodeposited Precursor

    Research output: Contribution to journalArticlepeer-review


    Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films have been prepared by electrodeposition techniques on molybdenum substrates. The films have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron probe microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. Additional Inor Cu, Ga, and Se have been added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2, and allowed to crystallize at 550.degree.C. A ZnO/CdS/CuIn1-xGaxSe2 device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency of 12.3%.
    Original languageAmerican English
    Pages (from-to)1376-1379
    Number of pages4
    JournalJournal of the Electrochemical Society
    Issue number4
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-413-21576


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