Abstract
Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films have been prepared by electrodeposition techniques on molybdenum substrates. The films have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron probe microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. Additional Inor Cu, Ga, and Se have been added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2, and allowed to crystallize at 550.degree.C. A ZnO/CdS/CuIn1-xGaxSe2 device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency of 12.3%.
Original language | American English |
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Pages (from-to) | 1376-1379 |
Number of pages | 4 |
Journal | Journal of the Electrochemical Society |
Volume | 144 |
Issue number | 4 |
DOIs | |
State | Published - 1997 |
NREL Publication Number
- NREL/JA-413-21576