12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell

Ochai Oklobia; Deborah McGott; Giray Kartopu; Steve Jones; Stuart Irvine

doi:10.1109/PVSC48320.2023.10359790

12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell

Ochai Oklobia, Deborah McGott, Giray Kartopu, Steve Jones, Stuart Irvine

Materials Science

Research output: Contribution to conference › Paper

Abstract

CdTe:As devices grown by MOCVD in the superstrate configuration have been reconfigured to a substrate structure, by employing a cleaving and reconstruction technique. Indium and aluminium doped Zinc oxide (IZO and AZO) layers were used as the transparent front interface without a metal grid. A substrate efficiency of 12.3% was realized with AZO front contact, retaining 80% of the superstrate device efficiency and an impressive approximately 99% of the open-circuit voltage. The IZO-based substrate device on the other hand performed at approximately 69 % retained efficiency. The crucial role of front interfaces is highlighted by the two contacts used here. The results in this work show promise for the development of highly efficient substrate CdTe:As devices.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC48320.2023.10359790
State	Published - 2023
Event	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) - San Juan, Puerto Rico Duration: 11 Jun 2023 → 16 Jun 2023

Conference

Conference	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
City	San Juan, Puerto Rico
Period	11/06/23 → 16/06/23

NREL Publication Number

NREL/CP-5K00-88886

Keywords

II-VI semiconductor materials
indium
performance evaluation
photovoltaic cells
photovoltaic systems
voltage
zinc oxide

Access to Document

10.1109/PVSC48320.2023.10359790

Cite this

@conference{66928209c2e74eb58a8b00fa8e8123d8,

title = "12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell",

abstract = "CdTe:As devices grown by MOCVD in the superstrate configuration have been reconfigured to a substrate structure, by employing a cleaving and reconstruction technique. Indium and aluminium doped Zinc oxide (IZO and AZO) layers were used as the transparent front interface without a metal grid. A substrate efficiency of 12.3% was realized with AZO front contact, retaining 80% of the superstrate device efficiency and an impressive approximately 99% of the open-circuit voltage. The IZO-based substrate device on the other hand performed at approximately 69 % retained efficiency. The crucial role of front interfaces is highlighted by the two contacts used here. The results in this work show promise for the development of highly efficient substrate CdTe:As devices.",

keywords = "II-VI semiconductor materials, indium, performance evaluation, photovoltaic cells, photovoltaic systems, voltage, zinc oxide",

author = "Ochai Oklobia and Deborah McGott and Giray Kartopu and Steve Jones and Stuart Irvine",

year = "2023",

doi = "10.1109/PVSC48320.2023.10359790",

language = "American English",

note = "2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) ; Conference date: 11-06-2023 Through 16-06-2023",

}

TY - CONF

T1 - 12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell

AU - Oklobia, Ochai

AU - McGott, Deborah

AU - Kartopu, Giray

AU - Jones, Steve

AU - Irvine, Stuart

PY - 2023

Y1 - 2023

N2 - CdTe:As devices grown by MOCVD in the superstrate configuration have been reconfigured to a substrate structure, by employing a cleaving and reconstruction technique. Indium and aluminium doped Zinc oxide (IZO and AZO) layers were used as the transparent front interface without a metal grid. A substrate efficiency of 12.3% was realized with AZO front contact, retaining 80% of the superstrate device efficiency and an impressive approximately 99% of the open-circuit voltage. The IZO-based substrate device on the other hand performed at approximately 69 % retained efficiency. The crucial role of front interfaces is highlighted by the two contacts used here. The results in this work show promise for the development of highly efficient substrate CdTe:As devices.

AB - CdTe:As devices grown by MOCVD in the superstrate configuration have been reconfigured to a substrate structure, by employing a cleaving and reconstruction technique. Indium and aluminium doped Zinc oxide (IZO and AZO) layers were used as the transparent front interface without a metal grid. A substrate efficiency of 12.3% was realized with AZO front contact, retaining 80% of the superstrate device efficiency and an impressive approximately 99% of the open-circuit voltage. The IZO-based substrate device on the other hand performed at approximately 69 % retained efficiency. The crucial role of front interfaces is highlighted by the two contacts used here. The results in this work show promise for the development of highly efficient substrate CdTe:As devices.

KW - II-VI semiconductor materials

KW - indium

KW - performance evaluation

KW - photovoltaic cells

KW - photovoltaic systems

KW - voltage

KW - zinc oxide

U2 - 10.1109/PVSC48320.2023.10359790

DO - 10.1109/PVSC48320.2023.10359790

M3 - Paper

T2 - 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)

Y2 - 11 June 2023 through 16 June 2023

ER -

12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this