13% Silicon Film(TM) Solar Cells on Low-Cost Barrier-Coated Substrates

doi:10.1109/PVSC.1996.564047

13% Silicon Film(TM) Solar Cells on Low-Cost Barrier-Coated Substrates

Research output: Contribution to conference › Paper

Abstract

Thin film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using theSilicon-Film(TM) process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 ..mu..m when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this document.

Original language	American English
Pages	477-480
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564047
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by the AstroPower, Inc., Newark, Delaware

NREL Publication Number

NREL/CP-22385

Access to Document

10.1109/PVSC.1996.564047

Cite this

@conference{62abd9c73bbe4ed4b5fd6354ddbc2c5c,

title = "13% Silicon Film(TM) Solar Cells on Low-Cost Barrier-Coated Substrates",

abstract = "Thin film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using theSilicon-Film(TM) process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 ..mu..m when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this document.",

author = "NREL",

note = "Work performed by the AstroPower, Inc., Newark, Delaware; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564047",

language = "American English",

pages = "477--480",

}

TY - CONF

T1 - 13% Silicon Film(TM) Solar Cells on Low-Cost Barrier-Coated Substrates

AU - NREL, null

N1 - Work performed by the AstroPower, Inc., Newark, Delaware

PY - 1996

Y1 - 1996

N2 - Thin film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using theSilicon-Film(TM) process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 ..mu..m when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this document.

AB - Thin film polycrystalline silicon solar cells offer significant cost savings over single crystal and cast polycrystalline wafers that are sliced from ingots, and they are more stable than amorphous silicon solar cells which suffer from photo-induced degradation. A new barrier layer and low cost substrate that meet the criteria for thin films of polycrystalline silicon to be grown using theSilicon-Film(TM) process has been developed. Films grown on this new barrier/substrate combination have exhibited minority carrier diffusion lengths as high as 250 ..mu..m when external phosphorous gettering is employed. Using conventional silicon processing technologies, with special provision made for electrical connection to the base layer, an efficiency of 13.8% has been measured in a 0.46cm2 thin-film polycrystalline silicon solar cell grown on this new barrier-coated substrate. Technical details of the development are presented in this document.

U2 - 10.1109/PVSC.1996.564047

DO - 10.1109/PVSC.1996.564047

M3 - Paper

SP - 477

EP - 480

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

13% Silicon Film(TM) Solar Cells on Low-Cost Barrier-Coated Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this