Abstract
Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films were prepared by electrodeposition techniques on molybdenum substrates. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Devices with Ga/(In+Ga) ratio of 0.16, 0.26, and 0.39 were fabricated. The films have been characterized byinductive-coupled plasma spectrometry, Auger electron spectroscopy, X-ray, electron probes microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. A ZnO/CdS/CuIn1-xGaxSe2 device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency up to 13%.
| Original language | American English |
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| Pages | 298-305 |
| Number of pages | 8 |
| State | Published - 1997 |
| Event | Electrochemical Society Symposium on Electrode Materials and Processes for Energy Conversion and Storage IV, 191st Meeting of the Electrochemical Society - Montreal, Canada Duration: 4 May 1997 → 9 May 1997 |
Conference
| Conference | Electrochemical Society Symposium on Electrode Materials and Processes for Energy Conversion and Storage IV, 191st Meeting of the Electrochemical Society |
|---|---|
| City | Montreal, Canada |
| Period | 4/05/97 → 9/05/97 |
NREL Publication Number
- NREL/CP-450-22771