14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

R. N. Bhattacharya, W. Batchelor, H. Wiesner, F. Hasoon, J. E. Granata, K. Ramanathan, J. Alleman, J. Keane, A. Mason, R. J. Matson, R. N. Noufi

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We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

Original languageAmerican English
Pages (from-to)3435-3440
Number of pages6
JournalJournal of the Electrochemical Society
Issue number10
StatePublished - 1998

NREL Publication Number

  • NREL/JA-590-24201


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