14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

R. N. Bhattacharya; W. Batchelor; H. Wiesner; F. Hasoon; J. E. Granata; K. Ramanathan; J. Alleman; J. Keane; A. Mason; R. J. Matson; R. N. Noufi

doi:10.1149/1.1838823

14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

R. N. Bhattacharya, W. Batchelor, H. Wiesner, F. Hasoon, J. E. Granata, K. Ramanathan, J. Alleman, J. Keane, A. Mason, R. J. Matson, R. N. Noufi

Materials, Chemical, and Computational Science Research Operations

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Abstract

We have fabricated 14.1% efficient CuIn_1-xGa_xSe₂ (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn_1-xGa_xSe₂. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu₂Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

Original language	American English
Pages (from-to)	3435-3440
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	10
DOIs	https://doi.org/10.1149/1.1838823 https://doi.org/10.1149/1.1838823
State	Published - 1998

NREL Publication Number

NREL/JA-590-24201

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Bhattacharya, R. N., Batchelor, W., Wiesner, H., Hasoon, F., Granata, J. E., Ramanathan, K., Alleman, J., Keane, J., Mason, A., Matson, R. J., & Noufi, R. N. (1998). 14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors. Journal of the Electrochemical Society, 145(10), 3435-3440. https://doi.org/10.1149/1.1838823, https://doi.org/10.1149/1.1838823

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title = "14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors",

abstract = "We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.",

author = "Bhattacharya, {R. N.} and W. Batchelor and H. Wiesner and F. Hasoon and Granata, {J. E.} and K. Ramanathan and J. Alleman and J. Keane and A. Mason and Matson, {R. J.} and Noufi, {R. N.}",

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T1 - 14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

AU - Bhattacharya, R. N.

AU - Batchelor, W.

AU - Wiesner, H.

AU - Hasoon, F.

AU - Granata, J. E.

AU - Ramanathan, K.

AU - Alleman, J.

AU - Keane, J.

AU - Mason, A.

AU - Matson, R. J.

AU - Noufi, R. N.

PY - 1998

Y1 - 1998

N2 - We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

AB - We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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ER -

14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

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