14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

R. N. Bhattacharya; W. Batchelor; H. Wiesner; F. Hasoon; J. E. Granata; K. Ramanathan; J. Alleman; J. Keane; A. Mason; R. J. Matson; R. N. Noufi

doi:10.1149/1.1838823

14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

R. N. Bhattacharya
, W. Batchelor
, H. Wiesner
, F. Hasoon
, J. E. Granata
, K. Ramanathan
, J. Alleman
, J. Keane
, A. Mason
, R. J. Matson
, R. N. Noufi

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

46 Scopus Citations

Abstract

We have fabricated 14.1% efficient CuIn_1-xGa_xSe₂ (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn_1-xGa_xSe₂. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu₂Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

Original language	American English
Pages (from-to)	3435-3440
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	10
DOIs	https://doi.org/10.1149/1.1838823 https://doi.org/10.1149/1.1838823
State	Published - 1998

NLR Publication Number

NREL/JA-590-24201

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Bhattacharya, R. N., Batchelor, W., Wiesner, H., Hasoon, F., Granata, J. E., Ramanathan, K., Alleman, J., Keane, J., Mason, A., Matson, R. J., & Noufi, R. N. (1998). 14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors. Journal of the Electrochemical Society, 145(10), 3435-3440. https://doi.org/10.1149/1.1838823, https://doi.org/10.1149/1.1838823

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title = "14.1\% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors",

abstract = "We have fabricated 14.1\% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.",

author = "Bhattacharya, \{R. N.\} and W. Batchelor and H. Wiesner and F. Hasoon and Granata, \{J. E.\} and K. Ramanathan and J. Alleman and J. Keane and A. Mason and Matson, \{R. J.\} and Noufi, \{R. N.\}",

year = "1998",

doi = "10.1149/1.1838823",

language = "American English",

volume = "145",

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journal = "Journal of the Electrochemical Society",

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T1 - 14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

AU - Bhattacharya, R. N.

AU - Batchelor, W.

AU - Wiesner, H.

AU - Hasoon, F.

AU - Granata, J. E.

AU - Ramanathan, K.

AU - Alleman, J.

AU - Keane, J.

AU - Mason, A.

AU - Matson, R. J.

AU - Noufi, R. N.

PY - 1998

Y1 - 1998

N2 - We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

AB - We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As-deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

UR - https://www.scopus.com/pages/publications/11744325491

U2 - 10.1149/1.1838823

DO - 10.1149/1.1838823

M3 - Article

AN - SCOPUS:11744325491

SN - 0013-4651

VL - 145

SP - 3435

EP - 3440

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

14.1% CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited Precursors

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