15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

Michelle Vaisman, Shizhao Fan, Kevin Yaung, Diego Martin-Martin, Zhengshan Yu, Mehdi Leilaeioun, Zachary Holman, Minjoo Lee

Research output: Contribution to journalArticlepeer-review

44 Scopus Citations


As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. We further present a separate Si bottom cell with a 1.7 eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.
Original languageAmerican English
Pages (from-to)1911-1918
Number of pages8
JournalACS Energy Letters
Issue number8
StatePublished - 2017

NREL Publication Number

  • NREL/JA-5J00-70182


  • efficiency
  • multijunction
  • solar cells


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