15.4% CuIn1-xGaxSe2-Based Photovoltaic Cells from Solution-Based Precursor Films

Research output: Contribution to conferencePaper


We have fabricated 15.4%- and 12.4%-efficient CuIn1-XGaXSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1-XGaXSe2. The ED and ELdevice parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.
Original languageAmerican English
Number of pages7
StatePublished - 1999
EventEuropean Materials Research Society Meeting - Strasbourg, France
Duration: 1 Jun 19994 Jun 1999


ConferenceEuropean Materials Research Society Meeting
CityStrasbourg, France

NREL Publication Number

  • NREL/CP-590-26611


Dive into the research topics of '15.4% CuIn1-xGaxSe2-Based Photovoltaic Cells from Solution-Based Precursor Films'. Together they form a unique fingerprint.

Cite this