Abstract
We have fabricated 15.4%- and 12.4%-efficient CuIn1-XGaXSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1-XGaXSe2. The ED and ELdevice parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.
| Original language | American English |
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| Number of pages | 7 |
| State | Published - 1999 |
| Event | European Materials Research Society Meeting - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999 |
Conference
| Conference | European Materials Research Society Meeting |
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| City | Strasbourg, France |
| Period | 1/06/99 → 4/06/99 |
NREL Publication Number
- NREL/CP-590-26611
