17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact

Research output: Contribution to conferencePaper

Abstract

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition.This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmedefficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 7 Nov 200510 Nov 2005

Conference

Conference2005 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado
Period7/11/0510/11/05

Bibliographical note

Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

NREL Publication Number

  • NREL/CP-520-38942

Keywords

  • heterojunctions
  • NREL
  • photovoltaics (PV)
  • PV
  • solar
  • solar cells

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