18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

Raghu N. Bhattacharya, Miguel A. Contreras, Glenn Teeter

Research output: Contribution to journalArticlepeer-review

93 Scopus Citations

Abstract

The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

Original languageAmerican English
Pages (from-to)L1475-L1476
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number11 B
DOIs
StatePublished - 2004

NREL Publication Number

  • NREL/JA-590-37856

Keywords

  • Chemical bath deposition (CBD)
  • Copper indium gallium diselenide (CIGS)
  • ZnS(O,OH)

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