19.6% Electron-Irradiated GaInP/GaAs Cells

Sarah R. Kurtz, K. A. Bertness, D. J. Friedman, A. E. Kibbler, C. Kramer, J. M. Olson

Research output: Contribution to conferencePaperpeer-review

16 Scopus Citations


Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm2 Ga0.5P/GaAs devices irradiated by 1015 cm-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga0.5In0.5P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.

Original languageAmerican English
Number of pages4
StatePublished - 1994
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 5 Dec 19949 Dec 1994


ConferenceProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
CityWaikoloa, HI, USA

NREL Publication Number

  • NREL/CP-451-7463


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