19.6% Electron-Irradiated GaInP/GaAs Cells

Sarah R. Kurtz; K. A. Bertness; D. J. Friedman; A. E. Kibbler; C. Kramer; J. M. Olson

doi:10.1109/WCPEC.1994.521637

19.6% Electron-Irradiated GaInP/GaAs Cells

Sarah R. Kurtz, K. A. Bertness, D. J. Friedman, A. E. Kibbler, C. Kramer, J. M. Olson

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

16 Scopus Citations

Abstract

Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm² Ga_0.5P/GaAs devices irradiated by 10¹⁵ cm^-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga_0.5In_0.5P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.

Original language	American English
Pages	2108-2111
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.1994.521637
State	Published - 1994
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994

Conference

Conference	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
City	Waikoloa, HI, USA
Period	5/12/94 → 9/12/94

NREL Publication Number

NREL/CP-451-7463

Access to Document

10.1109/WCPEC.1994.521637

Cite this

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title = "19.6\% Electron-Irradiated GaInP/GaAs Cells",

abstract = "Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm2 Ga0.5P/GaAs devices irradiated by 1015 cm-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23\% and 19.6\%, respectively. A range of device structures gave EOL efficiencies greater than 18\%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga0.5In0.5P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.",

author = "Kurtz, \{Sarah R.\} and Bertness, \{K. A.\} and Friedman, \{D. J.\} and Kibbler, \{A. E.\} and C. Kramer and Olson, \{J. M.\}",

year = "1994",

doi = "10.1109/WCPEC.1994.521637",

language = "American English",

pages = "2108--2111",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

}

TY - CONF

T1 - 19.6% Electron-Irradiated GaInP/GaAs Cells

AU - Kurtz, Sarah R.

AU - Bertness, K. A.

AU - Friedman, D. J.

AU - Kibbler, A. E.

AU - Kramer, C.

AU - Olson, J. M.

PY - 1994

Y1 - 1994

N2 - Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm2 Ga0.5P/GaAs devices irradiated by 1015 cm-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga0.5In0.5P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.

AB - Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm2 Ga0.5P/GaAs devices irradiated by 1015 cm-2 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga0.5In0.5P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.

UR - https://www.scopus.com/pages/publications/0028720033

U2 - 10.1109/WCPEC.1994.521637

DO - 10.1109/WCPEC.1994.521637

M3 - Paper

AN - SCOPUS:0028720033

SP - 2108

EP - 2111

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

19.6% Electron-Irradiated GaInP/GaAs Cells

Abstract

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