Abstract
We report a new record total-area efficiency of 19.9% for CuInGaSe 2-based thin-film solar cells. Improved performance is due to higher fill factor. The device was made by three-stage co-evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented.
Original language | American English |
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Pages (from-to) | 235-239 |
Number of pages | 5 |
Journal | Progress in Photovoltaics: Research and Applications |
Volume | 16 |
Issue number | 3 |
DOIs | |
State | Published - 2008 |
NREL Publication Number
- NREL/JA-520-42434
Keywords
- CIGS
- Diode quality
- Fill factor
- Recombination
- Record efficiency
- Saturation current
- Surface
- Thin film solar cells