1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

Research output: Contribution to conference › Paper

Abstract

Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f andis dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

Original language	American English
Pages	641-646
Number of pages	6
State	Published - 1996
Event	Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996

Conference

Conference	Amorphous Silicon Technology 1996: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 12/04/96

NREL Publication Number

NREL/CP-23006

Cite this

@conference{35991a06e0da40cca4502e551e6a41ec,

title = "1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon",

abstract = "Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f andis dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.",

author = "NREL",

year = "1996",

language = "American English",

pages = "641--646",

note = "Amorphous Silicon Technology 1996: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - CONF

T1 - 1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f andis dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

AB - Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f andis dependent upon hydrogen concentration; the 1/f noise statistics are non-Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

M3 - Paper

SP - 641

EP - 646

T2 - Amorphous Silicon Technology 1996: Materials Research Society Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

Abstract

Conference

NREL Publication Number

Fingerprint

Cite this