21.8% GaInP2/GaAs Tandem Solar Cell

J. M. Olson; S. R. Kurtz; A. E. Kibbler

21.8% GaInP2/GaAs Tandem Solar Cell

J. M. Olson, S. R. Kurtz, A. E. Kibbler

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

11 Scopus Citations

Abstract

A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (J_sc = 11.8 mA/cm², V_oc = 2.19 V, and fill factor = 85% under AM1.5 global conditions, cell area = 1 cm²). The device structure is two n-on-p cells, Ga_0.5In_0.5P (GaInP₂) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP₂ and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.

Original language	American English
Pages	777-780
Number of pages	4
State	Published - 1989
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 26 Sep 1988 → 30 Sep 1988

Conference

Conference	Twentieth IEEE Photovoltaic Specialists Conference - 1988
City	Las Vegas, NV, USA
Period	26/09/88 → 30/09/88

NREL Publication Number

ACNR/CP-212-11115

Cite this

@conference{1649cdfd9ead4d799e1d675caf401027,

title = "21.8% GaInP2/GaAs Tandem Solar Cell",

abstract = "A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc = 11.8 mA/cm2, Voc = 2.19 V, and fill factor = 85% under AM1.5 global conditions, cell area = 1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.",

author = "Olson, {J. M.} and Kurtz, {S. R.} and Kibbler, {A. E.}",

year = "1989",

language = "American English",

pages = "777--780",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

}

TY - CONF

T1 - 21.8% GaInP2/GaAs Tandem Solar Cell

AU - Olson, J. M.

AU - Kurtz, S. R.

AU - Kibbler, A. E.

PY - 1989

Y1 - 1989

N2 - A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc = 11.8 mA/cm2, Voc = 2.19 V, and fill factor = 85% under AM1.5 global conditions, cell area = 1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.

AB - A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc = 11.8 mA/cm2, Voc = 2.19 V, and fill factor = 85% under AM1.5 global conditions, cell area = 1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.

UR - http://www.scopus.com/inward/record.url?scp=0024183993&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024183993

SP - 777

EP - 780

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

21.8% GaInP2/GaAs Tandem Solar Cell

Abstract

Conference

NREL Publication Number

Other files and links

Fingerprint

Cite this