21.8% GaInP2/GaAs Tandem Solar Cell

J. M. Olson, S. R. Kurtz, A. E. Kibbler

Research output: Contribution to conferencePaperpeer-review

11 Scopus Citations


A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc = 11.8 mA/cm2, Voc = 2.19 V, and fill factor = 85% under AM1.5 global conditions, cell area = 1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.

Original languageAmerican English
Number of pages4
StatePublished - 1989
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 26 Sep 198830 Sep 1988


ConferenceTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA

NREL Publication Number

  • ACNR/CP-212-11115


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