3-D Point Defect Density Distributions in Thin Film Cu(In,Ga)Se2 Measured by Atom Probe Tomography

Adam Stokes; Mowafak Al-Jassim; David R. Diercks; Brian Egaas; Brian Gorman

doi:10.1016/j.actamat.2015.09.035

3-D Point Defect Density Distributions in Thin Film Cu(In,Ga)Se2 Measured by Atom Probe Tomography

Adam Stokes, Mowafak Al-Jassim, David R. Diercks, Brian Egaas, Brian Gorman

Materials Science

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

This paper will discuss the findings of an ordered vacancy compound (OVC) phase that exists deep into the bulk of a high-efficiency Cu(In,Ga)Se₂ (CIGS) absorber that is shown to be a result of many ordered defect pairs of 2V_Cu + (In,Ga)_Cu as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the OVC Cu(In,Ga)₃Se₅ (135 phase) only within the first few nanometers from the CdS/CIGSe interface and at grain boundaries. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of an OVC phase to exist about 400 nm into the absorber. We show through concentration and density profiles that the concentration change from the stoichiometric Cu(In,Ga)Se₂ to the OVC is indeed a result of many ordered defect pairs. We use this volume to perform point defect density distributions to give unique insight to the band structure at the nanoscale.

Original language	American English
Article number	12445
Pages (from-to)	32-37
Number of pages	6
Journal	Acta Materialia
Volume	102
DOIs	https://doi.org/10.1016/j.actamat.2015.09.035 https://doi.org/10.1016/j.actamat.2015.09.035
State	Published - 2016

Bibliographical note

Publisher Copyright:
© 2015 Published by Elsevier Ltd on behalf of Acta Materialia Inc.

NREL Publication Number

NREL/JA-5K00-62472

Keywords

Atom probe tomography
Ordered vacancy compounds (OVC)
Point defect density
Thin film photovoltaics
Transmission electron microscopy

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title = "3-D Point Defect Density Distributions in Thin Film Cu(In,Ga)Se2 Measured by Atom Probe Tomography",

abstract = "This paper will discuss the findings of an ordered vacancy compound (OVC) phase that exists deep into the bulk of a high-efficiency Cu(In,Ga)Se2 (CIGS) absorber that is shown to be a result of many ordered defect pairs of 2VCu + (In,Ga)Cu as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the OVC Cu(In,Ga)3Se5 (135 phase) only within the first few nanometers from the CdS/CIGSe interface and at grain boundaries. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of an OVC phase to exist about 400 nm into the absorber. We show through concentration and density profiles that the concentration change from the stoichiometric Cu(In,Ga)Se2 to the OVC is indeed a result of many ordered defect pairs. We use this volume to perform point defect density distributions to give unique insight to the band structure at the nanoscale.",

keywords = "Atom probe tomography, Ordered vacancy compounds (OVC), Point defect density, Thin film photovoltaics, Transmission electron microscopy",

author = "Adam Stokes and Mowafak Al-Jassim and Diercks, {David R.} and Brian Egaas and Brian Gorman",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier Ltd on behalf of Acta Materialia Inc.",

year = "2016",

doi = "10.1016/j.actamat.2015.09.035",

language = "American English",

volume = "102",

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AU - Stokes, Adam

AU - Al-Jassim, Mowafak

AU - Diercks, David R.

AU - Egaas, Brian

AU - Gorman, Brian

PY - 2016

Y1 - 2016

N2 - This paper will discuss the findings of an ordered vacancy compound (OVC) phase that exists deep into the bulk of a high-efficiency Cu(In,Ga)Se2 (CIGS) absorber that is shown to be a result of many ordered defect pairs of 2VCu + (In,Ga)Cu as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the OVC Cu(In,Ga)3Se5 (135 phase) only within the first few nanometers from the CdS/CIGSe interface and at grain boundaries. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of an OVC phase to exist about 400 nm into the absorber. We show through concentration and density profiles that the concentration change from the stoichiometric Cu(In,Ga)Se2 to the OVC is indeed a result of many ordered defect pairs. We use this volume to perform point defect density distributions to give unique insight to the band structure at the nanoscale.

AB - This paper will discuss the findings of an ordered vacancy compound (OVC) phase that exists deep into the bulk of a high-efficiency Cu(In,Ga)Se2 (CIGS) absorber that is shown to be a result of many ordered defect pairs of 2VCu + (In,Ga)Cu as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the OVC Cu(In,Ga)3Se5 (135 phase) only within the first few nanometers from the CdS/CIGSe interface and at grain boundaries. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of an OVC phase to exist about 400 nm into the absorber. We show through concentration and density profiles that the concentration change from the stoichiometric Cu(In,Ga)Se2 to the OVC is indeed a result of many ordered defect pairs. We use this volume to perform point defect density distributions to give unique insight to the band structure at the nanoscale.

KW - Atom probe tomography

KW - Ordered vacancy compounds (OVC)

KW - Point defect density

KW - Thin film photovoltaics

KW - Transmission electron microscopy

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DO - 10.1016/j.actamat.2015.09.035

M3 - Article

AN - SCOPUS:84942474542

SN - 1359-6454

VL - 102

SP - 32

EP - 37

JO - Acta Materialia

JF - Acta Materialia

M1 - 12445

ER -

3-D Point Defect Density Distributions in Thin Film Cu(In,Ga)Se2 Measured by Atom Probe Tomography

Abstract

Bibliographical note

NREL Publication Number

Keywords

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