Abstract
We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.
Original language | American English |
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Number of pages | 5 |
State | Published - 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference (PVSC 48) - Duration: 20 Jun 2021 → 25 Jun 2021 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference (PVSC 48) |
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Period | 20/06/21 → 25/06/21 |
Bibliographical note
See NREL/CP-5900-81262 for paper as published in proceedingsNREL Publication Number
- NREL/CP-5900-80198
Keywords
- GaAsP
- GaInAs
- GaInP
- III-V
- photovoltaic
- PV
- quantum well
- strain balance