32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells: Preprint

Myles Steiner, Ryan France, Jeronimo Buencuerpo, John Geisz, Michael Nielsen, Andreas Pusch, Waldo Olavarria, Michelle Young, Nicholas Ekins-Daukes

Research output: Contribution to conferencePaper

Abstract

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.
Original languageAmerican English
Number of pages5
StatePublished - 2021
Event48th IEEE Photovoltaic Specialists Conference (PVSC 48) -
Duration: 20 Jun 202125 Jun 2021

Conference

Conference48th IEEE Photovoltaic Specialists Conference (PVSC 48)
Period20/06/2125/06/21

Bibliographical note

See NREL/CP-5900-81262 for paper as published in proceedings

NREL Publication Number

  • NREL/CP-5900-80198

Keywords

  • GaAsP
  • GaInAs
  • GaInP
  • III-V
  • photovoltaic
  • PV
  • quantum well
  • strain balance

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