Abstract
We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is ≤12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.
Original language | American English |
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Pages | 1084-1085 |
Number of pages | 2 |
DOIs | |
State | Published - 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
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Country/Territory | United States |
City | Fort Lauderdale |
Period | 20/06/21 → 25/06/21 |
Bibliographical note
See NREL/CP-5900-80198 for preprintNREL Publication Number
- NREL/CP-5900-81262
Keywords
- III-V
- photovoltaic
- quantum well
- strain balance