40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, K. M. Jones

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Abstract

A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.

Original languageAmerican English
Article number123505
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number12
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-43809

Keywords

  • solar cell efficiency
  • thin-film solar cells
  • triple-junction solar cells

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