40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

J. F. Geisz; D. J. Friedman; J. S. Ward; A. Duda; W. J. Olavarria; T. E. Moriarty; J. T. Kiehl; M. J. Romero; A. G. Norman; K. M. Jones

doi:10.1063/1.2988497

40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, K. M. Jones

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.₅₁ In.₄₉ P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. ₀₄ Ga.₉₆ As middle junction, and a metamorphic 0.89 eV In.₃₇ Ga.₆₃ As bottom junction. The two metamorphic junctions contained approximately 1× 10⁵ cm^-2 and 2-3× 10⁶ cm^-2 threading dislocations, respectively.

Original language	American English
Article number	123505
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2988497 https://doi.org/10.1063/1.2988497
State	Published - 2008

NREL Publication Number

NREL/JA-520-43809

Keywords

solar cell efficiency
thin-film solar cells
triple-junction solar cells

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Geisz, J. F., Friedman, D. J., Ward, J. S., Duda, A., Olavarria, W. J., Moriarty, T. E., Kiehl, J. T., Romero, M. J., Norman, A. G., & Jones, K. M. (2008). 40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions. Applied Physics Letters, 93(12), Article 123505. https://doi.org/10.1063/1.2988497, https://doi.org/10.1063/1.2988497

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abstract = "A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.",

keywords = "solar cell efficiency, thin-film solar cells, triple-junction solar cells",

author = "Geisz, {J. F.} and Friedman, {D. J.} and Ward, {J. S.} and A. Duda and Olavarria, {W. J.} and Moriarty, {T. E.} and Kiehl, {J. T.} and Romero, {M. J.} and Norman, {A. G.} and Jones, {K. M.}",

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AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Ward, J. S.

AU - Duda, A.

AU - Olavarria, W. J.

AU - Moriarty, T. E.

AU - Kiehl, J. T.

AU - Romero, M. J.

AU - Norman, A. G.

AU - Jones, K. M.

PY - 2008

Y1 - 2008

N2 - A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.

AB - A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.

KW - solar cell efficiency

KW - thin-film solar cells

KW - triple-junction solar cells

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U2 - 10.1063/1.2988497

DO - 10.1063/1.2988497

M3 - Article

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123505

ER -

40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

Abstract

NREL Publication Number

Keywords

UN SDGs

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