40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

J. F. Geisz; D. J. Friedman; J. S. Ward; A. Duda; W. J. Olavarria; T. E. Moriarty; J. T. Kiehl; M. J. Romero; A. G. Norman; K. M. Jones

doi:10.1063/1.2988497

40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

J. F. Geisz
, D. J. Friedman
, J. S. Ward
, A. Duda
, W. J. Olavarria
, T. E. Moriarty
, J. T. Kiehl
, M. J. Romero
, A. G. Norman
, K. M. Jones

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

470 Scopus Citations

Abstract

A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.₅₁ In.₄₉ P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. ₀₄ Ga.₉₆ As middle junction, and a metamorphic 0.89 eV In.₃₇ Ga.₆₃ As bottom junction. The two metamorphic junctions contained approximately 1× 10⁵ cm^-2 and 2-3× 10⁶ cm^-2 threading dislocations, respectively.

Original language	American English
Article number	123505
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2988497 https://doi.org/10.1063/1.2988497
State	Published - 2008

NLR Publication Number

NREL/JA-520-43809

Keywords

solar cell efficiency
thin-film solar cells
triple-junction solar cells

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Geisz, J. F., Friedman, D. J., Ward, J. S., Duda, A., Olavarria, W. J., Moriarty, T. E., Kiehl, J. T., Romero, M. J., Norman, A. G., & Jones, K. M. (2008). 40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions. Applied Physics Letters, 93(12), Article 123505. https://doi.org/10.1063/1.2988497, https://doi.org/10.1063/1.2988497

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title = "40.8\% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions",

abstract = "A photovoltaic conversion efficiency of 40.8\% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.",

keywords = "solar cell efficiency, thin-film solar cells, triple-junction solar cells",

author = "Geisz, \{J. F.\} and Friedman, \{D. J.\} and Ward, \{J. S.\} and A. Duda and Olavarria, \{W. J.\} and Moriarty, \{T. E.\} and Kiehl, \{J. T.\} and Romero, \{M. J.\} and Norman, \{A. G.\} and Jones, \{K. M.\}",

year = "2008",

doi = "10.1063/1.2988497",

language = "American English",

volume = "93",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - 40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Ward, J. S.

AU - Duda, A.

AU - Olavarria, W. J.

AU - Moriarty, T. E.

AU - Kiehl, J. T.

AU - Romero, M. J.

AU - Norman, A. G.

AU - Jones, K. M.

PY - 2008

Y1 - 2008

N2 - A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.

AB - A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga.51 In.49 P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In. 04 Ga.96 As middle junction, and a metamorphic 0.89 eV In.37 Ga.63 As bottom junction. The two metamorphic junctions contained approximately 1× 105 cm-2 and 2-3× 106 cm-2 threading dislocations, respectively.

KW - solar cell efficiency

KW - thin-film solar cells

KW - triple-junction solar cells

UR - https://www.scopus.com/pages/publications/52949112244

U2 - 10.1063/1.2988497

DO - 10.1063/1.2988497

M3 - Article

AN - SCOPUS:52949112244

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123505

ER -

40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions

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