5-7-5 Line Defects on As/Si(100): A General Stress-Relief Mechanism for V/IV Surfaces

W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, S. B. Zhang

Research output: Contribution to journalArticlepeer-review

18 Scopus Citations

Abstract

An entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3 -exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same stress-relieving 5-7-5 core structure. The strong similarities between line structures on AsSi(100), PSi(100), AsGe(100), and other V/IV surfaces lead to a much broader conclusion: 5-7-5 line structures are a general form of stress relief for group-V terminated Si and Ge surfaces.

Original languageAmerican English
Article number033304
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number3
DOIs
StatePublished - 2006

NREL Publication Number

  • NREL/JA-520-40713

Fingerprint

Dive into the research topics of '5-7-5 Line Defects on As/Si(100): A General Stress-Relief Mechanism for V/IV Surfaces'. Together they form a unique fingerprint.

Cite this