Abstract
An entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3 -exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same stress-relieving 5-7-5 core structure. The strong similarities between line structures on AsSi(100), PSi(100), AsGe(100), and other V/IV surfaces lead to a much broader conclusion: 5-7-5 line structures are a general form of stress relief for group-V terminated Si and Ge surfaces.
Original language | American English |
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Article number | 033304 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 74 |
Issue number | 3 |
DOIs | |
State | Published - 2006 |
NREL Publication Number
- NREL/JA-520-40713