600 mV Epitaxial Crystal Silicon Solar Cells Grown on Seeded Glass

David L. Young, Charles W. Teplin, Sachit Grover, Benjamin Lee, Jihun Oh, Vincenzo Lasalvia, Daniel Amkreutz, Stefan Gall, Monica Chahal, Greg J. Couillard, Ta Ko Chuang, Josefine Selj, Michael Deceglie, Harry Atwater, Howard M. Branz, Pauls Stradins

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.

Original languageAmerican English
Number of pages4
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013


Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL

NREL Publication Number

  • NREL/CP-5200-57852


  • Epitaxy
  • Photovoltaic cells
  • Seed layer
  • Silicon


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