Abstract
We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.
Original language | American English |
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Pages | 54-57 |
Number of pages | 4 |
DOIs | |
State | Published - 2013 |
Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013 |
Conference
Conference | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
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Country/Territory | United States |
City | Tampa, FL |
Period | 16/06/13 → 21/06/13 |
NREL Publication Number
- NREL/CP-5200-57852
Keywords
- Epitaxy
- Photovoltaic cells
- Seed layer
- Silicon