A 27.3% Efficient Ga0.5In0.5P/GaAs Tandem Solar Cell

J. M. Olson; S. R. Kurtz; A. E. Kibbler; P. Faine

doi:10.1063/1.102717

A 27.3% Efficient Ga0.5In0.5P/GaAs Tandem Solar Cell

J. M. Olson, S. R. Kurtz, A. E. Kibbler, P. Faine

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

272 Scopus Citations

Abstract

A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga_0.5In _0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga_0.5In_0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.

Original language	American English
Pages (from-to)	623-625
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	7
DOIs	https://doi.org/10.1063/1.102717 https://doi.org/10.1063/1.102717
State	Published - 1990

NREL Publication Number

ACNR/JA-212-11550

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title = "A 27.3% Efficient Ga0.5In0.5P/GaAs Tandem Solar Cell",

abstract = "A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In 0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.",

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AU - Faine, P.

PY - 1990

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AB - A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In 0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.

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A 27.3% Efficient Ga0.5In0.5P/GaAs Tandem Solar Cell

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