A 27.3% Efficient Ga0.5In0.5P/GaAs Tandem Solar Cell

J. M. Olson, S. R. Kurtz, A. E. Kibbler, P. Faine

Research output: Contribution to journalArticlepeer-review

272 Scopus Citations


A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In 0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700°C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.

Original languageAmerican English
Pages (from-to)623-625
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - 1990

NREL Publication Number

  • ACNR/JA-212-11550


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