Abstract
Zn(O,S) thin films were deposited by chemical bath deposition (CBD), atomic layer deposition, and sputtering. Composition of the films and band gap were measured and found to follow the trends described in the literature. CBD Zn(O,S) parameters were optimized and resulted in an 18.5% efficiency cell that did not require post annealing, light soaking, or an undoped ZnO layer. Promising results were obtained with sputtering. A 13% efficiency cell was obtained for a Zn(O,S) emitter layer deposited with 0.5%O2. With further optimization of process parameters and an analysis of the loss mechanisms, it should be possible to increase the efficiency.
Original language | American English |
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Pages | 1677-1680 |
Number of pages | 4 |
DOIs | |
State | Published - 2012 |
Event | 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
Conference | 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 |
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Country/Territory | United States |
City | Austin, TX |
Period | 3/06/12 → 8/06/12 |
Bibliographical note
See CP-5200-54138 for preprintNREL Publication Number
- NREL/CP-5200-56915
Keywords
- Buffer layers
- copper indium gallium diselenide
- thin film solar cells
- wide bad gap emitters
- zinc oxysulfide