A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Jiashu Qian; Tianshi Liu; Jake Soto; Mowafak Al-Jassim; Robert Stahlbush; Nadeemullah Mahadik; Limeng Shi; Michael Jin; Anant Agarwal

doi:10.1109/WiPDA56483.2022.9955255

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Jiashu Qian, Tianshi Liu, Jake Soto, Mowafak Al-Jassim, Robert Stahlbush, Nadeemullah Mahadik, Limeng Shi, Michael Jin, Anant Agarwal

Materials Science

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

Original language	American English
Pages	49-53
Number of pages	5
DOIs	https://doi.org/10.1109/WiPDA56483.2022.9955255 https://doi.org/10.1109/WiPDA56483.2022.9955255
State	Published - 2022
Event	9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 - Redondo Beach, United States Duration: 7 Nov 2022 → 9 Nov 2022

Conference

Conference	9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
Country/Territory	United States
City	Redondo Beach
Period	7/11/22 → 9/11/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

NREL Publication Number

NREL/CP-5K00-85140

Keywords

4H-SiC
basal plane dislocation (BPD)
body diode degradation
ion implantation
MOSFET

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Qian, J., Liu, T., Soto, J., Al-Jassim, M., Stahlbush, R., Mahadik, N., Shi, L., Jin, M., & Agarwal, A. (2022). A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs. 49-53. Paper presented at 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Redondo Beach, United States. https://doi.org/10.1109/WiPDA56483.2022.9955255, https://doi.org/10.1109/WiPDA56483.2022.9955255

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title = "A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs",

abstract = "It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.",

keywords = "4H-SiC, basal plane dislocation (BPD), body diode degradation, ion implantation, MOSFET",

author = "Jiashu Qian and Tianshi Liu and Jake Soto and Mowafak Al-Jassim and Robert Stahlbush and Nadeemullah Mahadik and Limeng Shi and Michael Jin and Anant Agarwal",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 ; Conference date: 07-11-2022 Through 09-11-2022",

year = "2022",

doi = "10.1109/WiPDA56483.2022.9955255",

language = "American English",

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Qian, J, Liu, T, Soto, J, Al-Jassim, M, Stahlbush, R, Mahadik, N, Shi, L, Jin, M & Agarwal, A 2022, 'A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs', Paper presented at 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Redondo Beach, United States, 7/11/22 - 9/11/22 pp. 49-53. https://doi.org/10.1109/WiPDA56483.2022.9955255, https://doi.org/10.1109/WiPDA56483.2022.9955255

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs. / Qian, Jiashu; Liu, Tianshi; Soto, Jake et al.
2022. 49-53 Paper presented at 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Redondo Beach, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

AU - Qian, Jiashu

AU - Liu, Tianshi

AU - Soto, Jake

AU - Al-Jassim, Mowafak

AU - Stahlbush, Robert

AU - Mahadik, Nadeemullah

AU - Shi, Limeng

AU - Jin, Michael

AU - Agarwal, Anant

PY - 2022

Y1 - 2022

N2 - It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

AB - It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

KW - 4H-SiC

KW - basal plane dislocation (BPD)

KW - body diode degradation

KW - ion implantation

KW - MOSFET

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T2 - 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

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ER -

Qian J, Liu T, Soto J, Al-Jassim M, Stahlbush R, Mahadik N et al.. A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs. 2022. Paper presented at 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022, Redondo Beach, United States. doi: 10.1109/WiPDA56483.2022.9955255, 10.1109/WiPDA56483.2022.9955255

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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