A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Jiashu Qian, Tianshi Liu, Jake Soto, Mowafak Al-Jassim, Robert Stahlbush, Nadeemullah Mahadik, Limeng Shi, Michael Jin, Anant Agarwal

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

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