A Comparison of MBE- and MOCVD-Grown GaInNAs

A. J. Ptak; S. W. Johnston; Sarah Kurtz; D. J. Friedman; W. K. Metzger

doi:10.1016/S0022-0248(02)02201-7

A Comparison of MBE- and MOCVD-Grown GaInNAs

A. J. Ptak, S. W. Johnston, Sarah Kurtz, D. J. Friedman, W. K. Metzger

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

98 Scopus Citations

Abstract

We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.

Original language	American English
Pages (from-to)	392-398
Number of pages	7
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02201-7 https://doi.org/10.1016/S0022-0248(02)02201-7
State	Published - Apr 2003
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 15 Sep 2002 → 20 Sep 2002

NREL Publication Number

NREL/JA-520-32846

Keywords

A1. Impurities
A1. Point defects
A3. Metalorganic chemical vapor deposition
A3. Molecular beam epitaxy
B1. Nitrides

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title = "A Comparison of MBE- and MOCVD-Grown GaInNAs",

abstract = "We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.",

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author = "Ptak, {A. J.} and Johnston, {S. W.} and Sarah Kurtz and Friedman, {D. J.} and Metzger, {W. K.}",

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T1 - A Comparison of MBE- and MOCVD-Grown GaInNAs

AU - Ptak, A. J.

AU - Johnston, S. W.

AU - Kurtz, Sarah

AU - Friedman, D. J.

AU - Metzger, W. K.

PY - 2003/4

Y1 - 2003/4

N2 - We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.

AB - We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.

KW - A1. Impurities

KW - A1. Point defects

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

UR - http://www.scopus.com/inward/record.url?scp=0037381458&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02201-7

DO - 10.1016/S0022-0248(02)02201-7

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SN - 0022-0248

VL - 251

SP - 392

EP - 398

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

A Comparison of MBE- and MOCVD-Grown GaInNAs

Abstract

NREL Publication Number

Keywords

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