A Comparison of MBE- and MOCVD-Grown GaInNAs

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We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect.

Original languageAmerican English
Pages (from-to)392-398
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sep 200220 Sep 2002

NREL Publication Number

  • NREL/JA-520-32846


  • A1. Impurities
  • A1. Point defects
  • A3. Metalorganic chemical vapor deposition
  • A3. Molecular beam epitaxy
  • B1. Nitrides


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