A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

Ramchandra Kotecha, Sonia Perez, Arman Rashid, Md Hossain, Tom Vrotsos, Anthony Francis, Homer Mantooth, Enrico Santi, Jerry Hudgins

Research output: Contribution to journalArticlepeer-review

18 Scopus Citations


This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n- and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc-dc converter and a dc-ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence.
Original languageAmerican English
Pages (from-to)8329-8341
Number of pages13
JournalIEEE Transactions on Power Electronics
Issue number9
StatePublished - 2019

NREL Publication Number

  • NREL/JA-5400-74559


  • compact model
  • datasheet driven model
  • device modeling
  • insulated gate bipolar transistor (IGBT)
  • power switching devices
  • silicon carbide (SiC)


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