A Metal:p-n-CdTe Schottky-Barrier Solar Cell: Photoelectrochemical Generation of a Shallow p-type Region in n-CdTe

J. Richard Pugh, Duli Mao, Ji Guang Zhang, Michael J. Heben, Arthur J. Nelson, Arthur J. Frank

Research output: Contribution to journalArticlepeer-review

19 Scopus Citations

Abstract

A simple method for producing a Au:p-n-CdTe Schottky barrier is described. The shallow p-n junction is formed by photoelectrochemical surface oxidization of n-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the p-type layer. Current-voltage and capacitance-voltage measurements show that the thin p-layer enhances the effective barrier height relative to that of a traditional Au:n-CdTe junction. These results account for the Au:p-n-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:n-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:p-n-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.

Original languageAmerican English
Pages (from-to)2619-2625
Number of pages7
JournalJournal of Applied Physics
Volume74
Issue number4
DOIs
StatePublished - 1993

NREL Publication Number

  • NREL/JA-452-5282

Keywords

  • auger electron spectroscopy
  • capacitance voltage profiling
  • charge transport
  • electron beam induced current
  • I-V characteristics
  • photoconductivity
  • photoconversion efficiency
  • Schottky barriers
  • semiconductors
  • X-ray photoelectron spectroscopy

Fingerprint

Dive into the research topics of 'A Metal:p-n-CdTe Schottky-Barrier Solar Cell: Photoelectrochemical Generation of a Shallow p-type Region in n-CdTe'. Together they form a unique fingerprint.

Cite this