Abstract
A simple method for producing a Au:p-n-CdTe Schottky barrier is described. The shallow p-n junction is formed by photoelectrochemical surface oxidization of n-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the p-type layer. Current-voltage and capacitance-voltage measurements show that the thin p-layer enhances the effective barrier height relative to that of a traditional Au:n-CdTe junction. These results account for the Au:p-n-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:n-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:p-n-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.
Original language | American English |
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Pages (from-to) | 2619-2625 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 74 |
Issue number | 4 |
DOIs | |
State | Published - 1993 |
NREL Publication Number
- NREL/JA-452-5282
Keywords
- auger electron spectroscopy
- capacitance voltage profiling
- charge transport
- electron beam induced current
- I-V characteristics
- photoconductivity
- photoconversion efficiency
- Schottky barriers
- semiconductors
- X-ray photoelectron spectroscopy