A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers

Bhushan Sopori; Debraj Guhabiswas; Przemyslaw Rupnowski; Sudhakar Shet; Srinivas Devayajanam; Helio Moutinho

doi:10.1109/pvsc.2011.6186278

A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers

Bhushan Sopori, Debraj Guhabiswas, Przemyslaw Rupnowski, Sudhakar Shet, Srinivas Devayajanam, Helio Moutinho

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.

Original language	American English
Pages	1680-1685
Number of pages	6
DOIs	https://doi.org/10.1109/pvsc.2011.6186278 https://doi.org/10.1109/PVSC.2011.6186278
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

NREL Publication Number

NREL/CP-5200-50705

Keywords

grain orientations
rapid measurement
silicon wafers

Access to Document

Cite this

Sopori, B., Guhabiswas, D., Rupnowski, P., Shet, S., Devayajanam, S., & Moutinho, H. (2011). A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers. 1680-1685. Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States. https://doi.org/10.1109/pvsc.2011.6186278, https://doi.org/10.1109/PVSC.2011.6186278

@conference{61ba41e24e1941a481bee8b5df2f4e5c,

title = "A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers",

abstract = "We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.",

keywords = "grain orientations, rapid measurement, silicon wafers",

author = "Bhushan Sopori and Debraj Guhabiswas and Przemyslaw Rupnowski and Sudhakar Shet and Srinivas Devayajanam and Helio Moutinho",

year = "2011",

doi = "10.1109/pvsc.2011.6186278",

language = "American English",

pages = "1680--1685",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Sopori, B, Guhabiswas, D, Rupnowski, P, Shet, S, Devayajanam, S & Moutinho, H 2011, 'A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers', Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11 - 24/06/11 pp. 1680-1685. https://doi.org/10.1109/pvsc.2011.6186278, https://doi.org/10.1109/PVSC.2011.6186278

TY - CONF

T1 - A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers

AU - Sopori, Bhushan

AU - Guhabiswas, Debraj

AU - Rupnowski, Przemyslaw

AU - Shet, Sudhakar

AU - Devayajanam, Srinivas

AU - Moutinho, Helio

PY - 2011

Y1 - 2011

N2 - We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.

AB - We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.

KW - grain orientations

KW - rapid measurement

KW - silicon wafers

UR - http://www.scopus.com/inward/record.url?scp=84861073196&partnerID=8YFLogxK

U2 - 10.1109/pvsc.2011.6186278

DO - 10.1109/pvsc.2011.6186278

M3 - Paper

AN - SCOPUS:84861073196

SP - 1680

EP - 1685

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

A New Method for Rapid Measurement of Orientations and Sizes of Grains in Multicrystalline Silicon Wafers

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this