A New Method to Analyze Multiexponential Transients for Deep-Level Transient Spectroscopy

Thomas R. Hanak; Richard K. Ahrenkiel; Donald J. Dunlavy; Assem M. Bakry; Michael L. Timmons

doi:10.1063/1.344973

A New Method to Analyze Multiexponential Transients for Deep-Level Transient Spectroscopy

Thomas R. Hanak, Richard K. Ahrenkiel, Donald J. Dunlavy, Assem M. Bakry, Michael L. Timmons

Materials Science

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

A new technique is introduced to analyze digitally recorded capacitive transients in order to determine the properties of deep states. Using a nonlinear double exponential fitting routine, it is shown that a two-trap model can be applied to the transient data. We determine the individual trap concentrations and produce two Arrhenius plots. The latter yields the thermal activation energies and capture cross sections of closely spaced traps. The excellent agreement between the new technique and the standard rate window technique is shown via a simulation deep-level transient spectroscopy spectrum. The new method is applied to Se-doped Al_xGa_1-xAs (x=0.19 and 0.27) grown by metal-organic chemical vapor deposition. The measured results for all deep states including the DX centers agree well with the values published in the literature.

Original language	American English
Pages (from-to)	4126-4132
Number of pages	7
Journal	Journal of Applied Physics
Volume	67
Issue number	9
DOIs	https://doi.org/10.1063/1.344973 https://doi.org/10.1063/1.344973
State	Published - 1990

Bibliographical note

Work performed by Department of Physics, University of Denver, Denver, Colorado; Solar Energy Research Institute, Golden, Colorado; and Research Triangle Institute, Research Triangle Park, North Carolina

NREL Publication Number

ACNR/JA-213-11707

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Cite this

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title = "A New Method to Analyze Multiexponential Transients for Deep-Level Transient Spectroscopy",

abstract = "A new technique is introduced to analyze digitally recorded capacitive transients in order to determine the properties of deep states. Using a nonlinear double exponential fitting routine, it is shown that a two-trap model can be applied to the transient data. We determine the individual trap concentrations and produce two Arrhenius plots. The latter yields the thermal activation energies and capture cross sections of closely spaced traps. The excellent agreement between the new technique and the standard rate window technique is shown via a simulation deep-level transient spectroscopy spectrum. The new method is applied to Se-doped AlxGa1-xAs (x=0.19 and 0.27) grown by metal-organic chemical vapor deposition. The measured results for all deep states including the DX centers agree well with the values published in the literature.",

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AU - Bakry, Assem M.

AU - Timmons, Michael L.

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AB - A new technique is introduced to analyze digitally recorded capacitive transients in order to determine the properties of deep states. Using a nonlinear double exponential fitting routine, it is shown that a two-trap model can be applied to the transient data. We determine the individual trap concentrations and produce two Arrhenius plots. The latter yields the thermal activation energies and capture cross sections of closely spaced traps. The excellent agreement between the new technique and the standard rate window technique is shown via a simulation deep-level transient spectroscopy spectrum. The new method is applied to Se-doped AlxGa1-xAs (x=0.19 and 0.27) grown by metal-organic chemical vapor deposition. The measured results for all deep states including the DX centers agree well with the values published in the literature.

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A New Method to Analyze Multiexponential Transients for Deep-Level Transient Spectroscopy

Abstract

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