Abstract
Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those techniques require final solar cells. We present a new characterization technique for screening PID-susceptible cells during the cell fabrication process. Illuminated Lock-In Thermography (ILIT) was used to image PID shunting of the cell without metallization and clearly showed PID-affected areas. PID-susceptible cells can be screened by ILIT, and the sample structure can advantageously be simplified as long as the sample has the silicon nitride antireflection coating and an aluminum back surface field.
Original language | American English |
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Pages | 907-910 |
Number of pages | 4 |
DOIs | |
State | Published - 18 Nov 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Conference
Conference | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 5/06/16 → 10/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
NREL Publication Number
- NREL/CP-5J00-65813
Keywords
- electroluminescence
- lock-in thermography
- photovoltaic cells
- PID
- reliability
- silicon