@misc{523848e0f78f4c4baaa21a461e221c98,
title = "A Path to III-V Photovoltaic Cost Reduction Combining GaAs (211) Spalling with Halide Vapor Phase Epitaxy",
abstract = "This presentation is an overview of the following, Spalling on 211 oriented wafers produces flat surface without faceting: 1) Demonstrated spall on entire 2{"} wafer; 2) GaAs and GaInP grown on 211 wafers by HVPE; and 3) Promising cell with VOC=1.02 V and IQE-1. Next steps: 1) Grow cell on spalled wafer and 2) Growth studies to improve material and cell on 211 substrates.",
keywords = "GaAs, halide vapor phase epitaxy, HVPE, III-V, photovoltaic, PV, spalling",
author = "Kevin Schulte and Mario Dumont and Anna Braun and Nicholas Yoo and Corinne Packard and John Simon and Aaron Ptak",
year = "2025",
doi = "10.2172/3016246",
language = "American English",
series = "Presented at the 53rd IEEE Photovoltaic Specialists Conference (PVSC 53), 8-13 June 2025, Montreal, Canada",
type = "Other",
}