A Performance Comparison Between GaInP-on-Si and GaAs-on-Si 3-Terminal Tandem Solar Cells

Kaitlyn VanSant, Emily Warren, John Geisz, Talysa Klein, Steve Johnston, William McMahon, Henning Schulte-Huxel, Michael Rienaecker, Robby Peibst, Adele Tamboli

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.

Original languageAmerican English
Article numberArticle No. 104950
Number of pages13
Issue number9
StatePublished - 16 Sep 2022

Bibliographical note

Publisher Copyright:
© 2022 The Author(s)

NREL Publication Number

  • NREL/JA-5K00-76819


  • multijunction
  • solar cell efficiencies
  • tandem cells
  • three terminals


Dive into the research topics of 'A Performance Comparison Between GaInP-on-Si and GaAs-on-Si 3-Terminal Tandem Solar Cells'. Together they form a unique fingerprint.

Cite this