A Perspective on the Electro-Thermal Co-Design of Ultra-Wide Bandgap Lateral Devices: Article No. 170501

Sukwon Choi, Samuel Graham, Srabanti Chowdhury, Eric Heller, Marko Tadjer, Gilberto Moreno, Sreekant Narumanchi

Research output: Contribution to journalArticlepeer-review

29 Scopus Citations


Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.
Original languageAmerican English
Number of pages15
JournalApplied Physics Letters
Issue number17
StatePublished - 2021

NREL Publication Number

  • NREL/JA-5400-80725


  • electro-thermal co-design
  • thermal characterization
  • thermal management of electronics
  • thermal properties
  • ultra-wide bandgap (UWBG) semiconductors


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