Abstract
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1−xN, x is the Al composition), β-phase gallium oxide (β-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1−xN and β-Ga2O3. This Perspective delineates the need and process for the “electro-thermal co-design” of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.
Original language | American English |
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Article number | 170501 |
Number of pages | 15 |
Journal | Applied Physics Letters |
Volume | 119 |
Issue number | 17 |
DOIs | |
State | Published - 25 Oct 2021 |
Bibliographical note
Publisher Copyright:© 2021 Author(s).
NREL Publication Number
- NREL/JA-5400-80725
Keywords
- electro-thermal co-design
- thermal characterization
- thermal management of electronics
- thermal properties
- ultra-wide bandgap (UWBG) semiconductors