a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

Research output: Contribution to conference › Paper

Abstract

The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge depositon of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 .mu.m thick a-Si layer. This also resulted in an improved spectral response of the solarcell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area .apprx. 0.24 cm2) yielded about9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

Original language	American English
Pages	77-82
Number of pages	6
State	Published - 1996
Event	Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 11 Apr 1996

Conference

Conference	Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 11/04/96

Bibliographical note

Work performed by State University of New York at Buffalo, Amherst, New York

NREL Publication Number

NREL/CP-23029

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{4cc191f651ac42909a3cb2aa2f719d54,

title = "a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties",

abstract = "The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge depositon of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 .mu.m thick a-Si layer. This also resulted in an improved spectral response of the solarcell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area .apprx. 0.24 cm2) yielded about9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.",

author = "NREL",

note = "Work performed by State University of New York at Buffalo, Amherst, New York; Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 11-04-1996",

year = "1996",

language = "American English",

pages = "77--82",

}

TY - CONF

T1 - a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

AU - NREL, null

N1 - Work performed by State University of New York at Buffalo, Amherst, New York

PY - 1996

Y1 - 1996

N2 - The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge depositon of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 .mu.m thick a-Si layer. This also resulted in an improved spectral response of the solarcell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area .apprx. 0.24 cm2) yielded about9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

AB - The photovoltaic (PV) properties of undoped amorphous silicon (a-Si)/p-type crystalline silicon (c-Si) solar cells were found to improve by a hydrofluoric acid treatment of c-Si just prior to glow discharge depositon of a-Si. The short circuit current density (Jsc) improved from 2.7 to 23.5 mA/cm2 for an 0.1 .mu.m thick a-Si layer. This also resulted in an improved spectral response of the solarcell in the violet region of the spectrum. The enhanced properties have been attributed to the improved carrier transport across the interface, as seen in the current-voltage-temperature relationships, and also PC-1D simulation of the devices. Solar cells of a similar type were also fabricated by dc magnetron sputtering of the a-Si layer. HF passivated cells (area .apprx. 0.24 cm2) yielded about9.5% efficiency with Jsc of 30 mA/cm2 and a FF of 0.6, without use of an A/R coating. The variation of the PV properties of these cells was investigated as a function of a-Si thickness and c-Si doping.

M3 - Paper

SP - 77

EP - 82

T2 - Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

a-Si/c-Si Solar Cells: Effect of Preparation and Processing Techniques on the Photovoltaic Properties

Abstract

Conference

Bibliographical note

NREL Publication Number

UN SDGs

Fingerprint

Cite this