a-SiGe:H Deposited by Hot-Wire CVD Using a Tantalum Filament Operated at Low Temperature

Research output: Contribution to conferencePaper

Abstract

We report the deposition of optimum-quality a-SiGe:H and a-Si:H by the hot-wire chemical vapor deposition (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small-angle x-ray scattering, photocapacitance, and conductivity results to those presented elsewhere.
Original languageAmerican English
Number of pages5
StatePublished - 2005
Event2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
Duration: 25 Oct 200428 Oct 2004

Conference

Conference2004 DOE Solar Energy Technologies Program Review Meeting
CityDenver, Colorado
Period25/10/0428/10/04

Bibliographical note

Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

NREL Publication Number

  • NREL/CP-520-37525

Keywords

  • hot-wire chemical vapor deposition (HWCVD)
  • photocapacitance
  • PV
  • small-angle x-ray scattering (SAXS)
  • tantalum filament

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