Abstract
We report the deposition of optimum-quality a-SiGe:H and a-Si:H by the hot-wire chemical vapor deposition (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small-angle x-ray scattering, photocapacitance, and conductivity results to those presented elsewhere.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-37525
Keywords
- hot-wire chemical vapor deposition (HWCVD)
- photocapacitance
- PV
- small-angle x-ray scattering (SAXS)
- tantalum filament