a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low Temperature

Research output: Contribution to conferencePaper

Abstract

We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle ; X-ray scattering (SAXS), photocapacitance, and conductivity measurements to earlier results, and fabricatesingle-junction n-i-p solar cell devices using these i-layers.
Original languageAmerican English
Number of pages7
StatePublished - 2005
Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
Duration: 3 Jan 20057 Jan 2005

Conference

Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
CityLake Buena Vista, Florida
Period3/01/057/01/05

NREL Publication Number

  • NREL/CP-520-37475

Keywords

  • hot-wire chemical vapor deposition (HWCVD)
  • low temperature
  • photocapacitance
  • PV
  • small-angle x-ray scattering (SAXS)
  • solar cells
  • tantalum filament

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