Abstract
We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle ; X-ray scattering (SAXS), photocapacitance, and conductivity measurements to earlier results, and fabricatesingle-junction n-i-p solar cell devices using these i-layers.
Original language | American English |
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Number of pages | 7 |
State | Published - 2005 |
Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
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City | Lake Buena Vista, Florida |
Period | 3/01/05 → 7/01/05 |
NREL Publication Number
- NREL/CP-520-37475
Keywords
- hot-wire chemical vapor deposition (HWCVD)
- low temperature
- photocapacitance
- PV
- small-angle x-ray scattering (SAXS)
- solar cells
- tantalum filament