a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low Temperature

    Research output: Contribution to conferencePaper

    Abstract

    We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle ; X-ray scattering (SAXS), photocapacitance, and conductivity measurements to earlier results, and fabricatesingle-junction n-i-p solar cell devices using these i-layers.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2005
    Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
    Duration: 3 Jan 20057 Jan 2005

    Conference

    Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
    CityLake Buena Vista, Florida
    Period3/01/057/01/05

    NREL Publication Number

    • NREL/CP-520-37475

    Keywords

    • hot-wire chemical vapor deposition (HWCVD)
    • low temperature
    • photocapacitance
    • PV
    • small-angle x-ray scattering (SAXS)
    • solar cells
    • tantalum filament

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