a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low Temperature

a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low Temperature

Research output: Contribution to conference › Paper

Original language	American English
Pages	1397-1400
Number of pages	4
State	Published - 2005
Event	Thirty-First IEEE Photovoltaic Specialists Conference-2005 - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	Thirty-First IEEE Photovoltaic Specialists Conference-2005
City	Lake Buena Vista, Florida
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37475

NREL Publication Number

NREL/CP-520-38905

Cite this

@conference{36f17d70a5464fa381c52fa0a5ac7df5,

title = "a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low Temperature",

author = "NREL",

note = "For preprint version see NREL/CP-520-37475; Thirty-First IEEE Photovoltaic Specialists Conference-2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "1397--1400",

}