a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

Research output: Contribution to conferencePaper

Abstract

We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.
Original languageAmerican English
Pages199-200
Number of pages2
StatePublished - 2000
EventProgram and NCPV Program Review Meeting 2000 - Denver, Colorado
Duration: 16 Apr 200019 Apr 2000

Conference

ConferenceProgram and NCPV Program Review Meeting 2000
CityDenver, Colorado
Period16/04/0019/04/00

NREL Publication Number

  • NREL/CP-520-28220

Keywords

  • amorphous Si
  • applications
  • cadmium telluride (CdTe) photovoltaic solar cells modules
  • components
  • concentrators
  • copper indium diselenide (CIS)
  • crystalline silicon (x-Si) (c-Si)
  • manufacturing
  • markets
  • NCPV
  • photovoltaics (PV)
  • research and development (R&D)
  • systems
  • systems integration
  • thin films

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