a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

Research output: Contribution to conference › Paper

Abstract

We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.

Original language	American English
Pages	199-200
Number of pages	2
State	Published - 2000
Event	Program and NCPV Program Review Meeting 2000 - Denver, Colorado Duration: 16 Apr 2000 → 19 Apr 2000

Conference

Conference	Program and NCPV Program Review Meeting 2000
City	Denver, Colorado
Period	16/04/00 → 19/04/00

NREL Publication Number

NREL/CP-520-28220

Keywords

amorphous Si
applications
cadmium telluride (CdTe) photovoltaic solar cells modules
components
concentrators
copper indium diselenide (CIS)
crystalline silicon (x-Si) (c-Si)
manufacturing
markets
NCPV
photovoltaics (PV)
research and development (R&D)
systems
systems integration
thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy00osti/28220.pdf

Cite this

@conference{908a2e29e46b4191a39563f08ee1fd63,

title = "a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates",

abstract = "We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.",

keywords = "amorphous Si, applications, cadmium telluride (CdTe) photovoltaic solar cells modules, components, concentrators, copper indium diselenide (CIS), crystalline silicon (x-Si) (c-Si), manufacturing, markets, NCPV, photovoltaics (PV), research and development (R&D), systems, systems integration, thin films",

author = "NREL",

year = "2000",

language = "American English",

pages = "199--200",

note = "Program and NCPV Program Review Meeting 2000 ; Conference date: 16-04-2000 Through 19-04-2000",

}

TY - CONF

T1 - a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

AU - NREL, null

PY - 2000

Y1 - 2000

N2 - We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.

AB - We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.

KW - amorphous Si

KW - applications

KW - cadmium telluride (CdTe) photovoltaic solar cells modules

KW - components

KW - concentrators

KW - copper indium diselenide (CIS)

KW - crystalline silicon (x-Si) (c-Si)

KW - manufacturing

KW - markets

KW - NCPV

KW - photovoltaics (PV)

KW - research and development (R&D)

KW - systems

KW - systems integration

KW - thin films

M3 - Paper

SP - 199

EP - 200

T2 - Program and NCPV Program Review Meeting 2000

Y2 - 16 April 2000 through 19 April 2000

ER -

a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

Abstract

Conference

NREL Publication Number

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this