A Simple Physical Model for Three-Terminal Tandem Cell Operation

Pauls Stradins; Adele Tamboli; Emily Warren; Michael Rienaecker; Robby Peibst

doi:10.1109/PVSC40753.2019.8980595

A Simple Physical Model for Three-Terminal Tandem Cell Operation

Pauls Stradins, Adele Tamboli, Emily Warren, Michael Rienaecker, Robby Peibst

Institut fur Solarenergieforschung

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide "generating" power islands in the 2D current J₁J₂ plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

Original language	American English
Pages	2176-2178
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980595 https://doi.org/10.1109/PVSC40753.2019.8980595
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73142

Keywords

bipolar transistor
photovoltaic cells
silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

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title = "A Simple Physical Model for Three-Terminal Tandem Cell Operation",

abstract = "We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide {"}generating{"} power islands in the 2D current J1J2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.",

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AU - Stradins, Pauls

AU - Tamboli, Adele

AU - Warren, Emily

AU - Rienaecker, Michael

AU - Peibst, Robby

PY - 2019/6

Y1 - 2019/6

N2 - We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide "generating" power islands in the 2D current J1J2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

AB - We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide "generating" power islands in the 2D current J1J2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

KW - bipolar transistor

KW - photovoltaic cells

KW - silicon

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T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

A Simple Physical Model for Three-Terminal Tandem Cell Operation

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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