Absorption Coefficient Measurements for Vacuum-Deposited Copper Ternary Thin Films

L. Y. Sun, L. L. Kazmerski, A. H. Clark, P. J. Ireland, D. W. Morton

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113 Scopus Citations


The absorption coefficients, alpha , of polycrystalline CuInS//2 and CuInSe//2 thin films have been determined at room temperature using transmission measurements. For each of these semiconductors, an absorption edge corresponding to the direct band-gapl transition (1. 54 plus or minus 0. 02 eV for CuInS//2 and 1. 00 plus or minus 0. 02 eV for CuInSe//2) is observed in the alpha vs h nu spectrum. In p-type CuInS//2 thin films, another edge is evident at lower energies (1. 41 multiplied by 1. 42 eV) and is attributed to transitions from a copper vacancy band to the conduction band. The effects of annealing on the absorption coefficient spectra of these chalcopyrite materials are presented. An additional absorption region, appears in the CuInSe//2 spectra at higher energies (h nu similar 1. 28 eV), and is critically dependent on the Se concentration of the films. This effect is discussed in terms of band structure, film stoichiometry and structural characteristics of the films.

Original languageAmerican English
Pages (from-to)265-268
Number of pages4
JournalJournal of vacuum science & technology
Issue number2
StatePublished - 1978
Externally publishedYes

NREL Publication Number

  • ACNR/JA-213-3540


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