Accelerated Testing and Modeling of Potential-Induced Degradation as a Function of Temperature and Relative Humidity

Peter Hacke, Sergiu Spataru, Kent Terwilliger, Greg Perrin, Stephen Glick, Sarah Kurtz, John Wohlgemuth

Research output: Contribution to conferencePaperpeer-review

7 Scopus Citations

Abstract

An acceleration model based on the Peck equation was applied to power performance of crystalline silicon cell modules as a function of time and of temperature and humidity, the two main environmental stress factors that promote potential-induced degradation. This model was derived from module power degradation data obtained semi-continuously and statistically by in-situ dark current-voltage measurements in an environmental chamber. The modeling enables prediction of degradation rates and times as functions of temperature and humidity. Power degradation could be modeled linearly as a function of time to the second power; additionally, we found that coulombs transferred from the active cell circuit to ground during the stress test is approximately linear with time. Therefore, the power loss could be linearized as a function of coulombs squared. With this result, we observed that when the module face was completely grounded with a condensed phase conductor, leakage current exceeded the anticipated corresponding degradation rate relative to the other tests performed in damp heat.

Original languageAmerican English
Number of pages5
DOIs
StatePublished - 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Bibliographical note

Also published in the IEEE Journal of Photovoltaics: see NREL/JA-5J00-64917

NREL Publication Number

  • NREL/CP-5J00-64449

Keywords

  • photovoltaic modules
  • potential-induced degradation
  • silicon
  • solar cells

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